| 特制多孔硅的较低的反射率和较高的少数载流子寿命 |
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| 引用本文： | 张楠生,马忠权,周呈悦,何波. 特制多孔硅的较低的反射率和较高的少数载流子寿命[J]. 半导体学报, 2009, 30(7): 072004-4 |
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| 作者姓名： | 张楠生 马忠权 周呈悦 何波 |
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| 作者单位： | SHU-SolarE R&D Laboratory Department of Physics;Shanghai University; |
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| 摘 要： | Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion.The porous silicon（PS） structure with a mixture of nano-and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization.The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions（i.e., the current density and the anodization time）.It has been shown that much a lower reflectivity of approximately 1.42% in the range 380-1100 nm is realized by using optimized conditions.In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ～3.19 μs.These values are very close to the reflectivity and the minority carrier lifetime of Si3N4 as a passivation layer on a bulk silicon-based solar cell（0.33% and 3.03 μs, respectively）.
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| 关 键 词： | 少数载流子寿命 低反射率 多孔硅 太阳能电池 化学选择性 光电调制器 晶体表面 氧化时间 |
Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon |
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| Zhang Nansheng,Ma Zhongquan,Zhou Chengyue and He Bo. Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon[J]. Chinese Journal of Semiconductors, 2009, 30(7): 072004-4 |
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| Authors: | Zhang Nansheng Ma Zhongquan Zhou Chengyue He Bo |
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| Affiliation: | SHU-SolarE R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China;SHU-SolarE R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China;SHU-SolarE R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China;SHU-SolarE R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China |
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| Abstract: | Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion.The porous silicon(PS) structure with a mixture of nano-and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization.The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions(i.e., the current density and the... |
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| Keywords: | porous silicon reflectivity minority carrier lifetime |
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