Solid state interracial reactions in electrodeposited Cu/Sn couples

Cu/Sn couples, prepared by sequentially electroplating Cu and Sn layers on metallized Si wafers, were employed to study the microstructures, phases and the growth kinetics of Cu-Sn intermediate phases, when electroplated Cu/Sn couples were aged at room temperature or annealed at temperatures from 373 K to 498 K for various time. Only Cu₆Sn₅ formed in aged couples or couples annealed at temperature below 398 K. The Cu₆Sn₅ layer was continuous, but not uniform, with protrusions extending into the Sn matrix. When Cu/Sn couples were annealed at temperatures from 423 K to 498 K, two continuous and uniform Cn₆Sn₅/Cu₃Sn layers formed within the reaction region between Sn and Cu. There were many voids near the Cu₃Sn/Cu interface and within the Cu₃Sn layer. Cu₆Sn₅ and Cu₃Sn formations both follow parabolic growth kinetics with activation energies of 41.4 kJ/mol for Cu₆Sn₅ and 90.4 kJ/mol for Cu₃Sn, respectively.