薄栅介质的电子俘获击穿机理及物理模型

氧化层的经时击穿是集成电路中一个非常重要的问题．从理论上分析了氧化层经时击穿的电子俘获击穿机理，给出了相关的物理模型，同时指出了一些物理模型中存在的问题，为进一步研究氧化层的经时击穿机理及氧化层经时击穿可靠性的建模提供了理论依据．

Recent advances in electron-trapping breakdown theories and physical models of thin gate dielectric

The breakdown of TDDB is one of the most important problems in integrated circuits. This paper gives theoretical analysis for electron trapping breakdown theories of TDDB, and gives correlative physical models. The problems of some physical models are also pointed out. This paper provides theoretical basis for the further study of breakdown theories of TDDB and modeling of TDDB reliability.