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硅片Map图信息的提取和利用
引用本文:张东红,阮刚.硅片Map图信息的提取和利用[J].固体电子学研究与进展,1995,15(2):180-184.
作者姓名:张东红  阮刚
作者单位:复旦大学微电子学研究所
基金项目:“七五”攻关《先进CAD技术》资助
摘    要:分析了硅片Map图所提供的生产成品率和各类不合格芯片的位置分布信息,讨论了利用硅片之间Overlap法(重叠法)和硅片上Window法(窗口法)对Map图进行的统计。着重讨论了:按硅片中不合格芯片密度的显著差异划分边缘区及中心区;不合格芯片局部聚集现象的定量表示;随机性强的不合格芯片的统计分布;有关信息由相应C语言软件自动提取,与Map图计算机测试进行联用,可用于生产监控、影响成品率因素分析和工艺缺陷的深入研究。

关 键 词:硅片Map图,工艺缺陷,成品率

Extraction and Utilization of Process Information from Si Wafer Maps
Zhang Donghong, Ruan Gang.Extraction and Utilization of Process Information from Si Wafer Maps[J].Research & Progress of Solid State Electronics,1995,15(2):180-184.
Authors:Zhang Donghong  Ruan Gang
Abstract:he process information is extracted from Si wafer map data by using the“overlap”and“window”methods, which analyses dice yield and distribution of “bad”chips statistically. The center and side area on the wafer determined by“bad”chip density are obtained by statistical judgement. The shape and location of bad chip clustering resulting from systematic errors are also obtained through“window”division. The resulting random space distribution of“bad”chips marks the random defect distribution on the wafer. Softwares using these methods can be easily applied to wafer map testing,making process defect control and yield loss analysis easler.
Keywords:Wafer Map  Process Defect  Yield
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