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Growth of phosphorus-doped p-type ZnO thin films by MOCVD |
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| Authors: | Zhizhen YE Jingrui WANG Yazhen WU Xincui ZHOU Fugang CHEN Weizhong XU Yan MIAO Jingyun HUANG Jianguo LU Liping ZHU Binghui ZHAO |
| Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
| Abstract: | Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O2, and P2O5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films. |
| Keywords: | p-type ZnO metalorganic chemical vapor deposition (MOCVD) phosphorus-doping Acknowledgements This work was supported by the National |
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