Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices |
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Authors: | Hideki Matsumura Tomoaki HasegawaShogo Nishizaki Keisuke Ohdaira |
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Affiliation: | JAIST (Japan Advanced Institute of Science and Technology), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan |
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Abstract: | Advantage of plasma-less deposition in catalytic chemical vapor deposition (Cat-CVD) is demonstrated in performance of amorphous-silicon (a-Si) thin-film transistors (TFTs), by comparing with a-Si TFTs fabricated by plasma-enhanced CVD (PECVD). Cat-CVD a-Si TFTs show 2 or 3 orders of magnitude lower off-current than PECVD ones. Exposure of Cat-CVD TFTs to an argon or a hydrogen plasma severely increases their off-current, while the off-current recovers by chemically etching the plasma-damaged surface layer. It is concluded that PECVD damages the a-Si surface to a depth of several tens of nm, whereas Cat-CVD induces no serious damage to the film surface and therefore induces no deterioration of electrical properties. |
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Keywords: | Cat-CVD PECVD Thin Film Transistor (TFT) Amorphous Silicon (a-Si) Silicon Nitride (SiNx) Plasma damage Plasma treatment |
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