Effects of the velocity saturated region on MOSFET characteristics |
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| Authors: | Takeuchi K. Fukuma M. |
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| Affiliation: | Microelectron. Res. Labs., NEC Corp., Sagamihara ; |
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| Abstract: | A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling |
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