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10 Gbit/s AND gate using dual-gate GaAs MESFET |
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| Authors: | Tell R. Andersson T. Eng S.T. |
| Affiliation: | Chalmers University of Technology, Research Laboratory of Electro-Optics & Lasers, Gothenburg, Sweden; |
| Abstract: | Using a commercial dual-gate GaAs MESFET transistor mounted in a microstrip circuit, an AND gate has been built. With the 100 ps (FWHM) wide test pulses available, a speed of 10 Gbit/s NRZ and a pulse suppression of at least 14 dB was obtained. |
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