低温载流子冻析效应及其对半导体器件电性能的影响

结合载流子热激发和场致激发的电离理论，对计算电离杂质浓度的物理模型和计算方法进行了修正，由于考虑了载流子的费米统计分布、载流子对杂质电离能的屏蔽作用、ＰｏｏｌｅＦｒｅｎｋｅｌ强场理论和自加热等物理效应的影响，因而可精确描述低温下载流子冻析效应、浅能级杂质的陷阱行为及其对低温器件交直流性能的影响。

Carriers Freeze-out Effect and Its Influence on the Semiconductor Device Properties at Low Temperature

The physical model and calculation method of ionized impurity concentrations in semiconductors are modified on the basis of carriers thermal emission and field-enhanced ionization and in consideration of Fermi-Dirac statistics,the carriers screening effect on the ionization energy,Poole-Frenkel high electrical field effect and self-heating effect. This kind of model can describe the carriers freeze-out effect, shallow impurity energy trapping behaviour and their influence on the DC and AC properties of semiconductor devices at low temperature.