High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy |
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| Authors: | Song J-I Palmstrom CJ Van der Gaag BP Hong W-P Hayes JR Chough KB |
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| Affiliation: | Bellcore, Red Bank, NJ, USA; |
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| Abstract: | InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7*10/sup 19//cm/sup 3/. To the authors' knowledge, this is the highest doping level reported using carbon. HBTs with a 20 AA spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV/sub CEO/ were 7 and 6 V, respectively.<> |
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