An easy-to-use mismatch model for the MOS transistor |
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Authors: | Croon J.A. Rosmeulen M. Decoutere S. Sansen W. Maes H.E. |
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Affiliation: | IMEC, Leuven; |
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Abstract: | In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model. |
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