Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures |
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Authors: | M S Goorsky S E Lindo S Guha G M Haugen |
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Affiliation: | (1) Department of Materials Science and Engineering, University of California, Los Angeles, 90095-1595 Los Angeles, CA;(2) IBM T.J. Watson Research Center, 10598 Yorktown Heights, NY;(3) 3M Corporate Research Laboratories, 3M Center, 201-1N-35, 55144-1000 St. Paul, MN |
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Abstract: | X-ray scattering measurements of wide bandgap II-VI heterostructures show that stacking faults (which nucleate defects that
are responsible for optical degradation of light emitting diodes and lasers) introduce significant levels of diffuse scattering
near Bragg reflections of both the epitaxial layers and the GaAs substrate. We employed triple axis x-ray diffraction techniques
to investigate stackingfault diffuse scattering and used cathodoluminescence and transmission electron microscopy to independently
measure the stacking fault density. For comparison, double axis scans from the same samples were largely incapable of detecting
the presence of these defects. Measurements taken at different azimuthal positions exhibit different levels of diffuse scattering
and the diffuse scattering intensity is related to the stacking fault intensity in each <110> direction, which suggests that
this technique can provide a non-destructive assessment of defects present in these systems. For some samples, the ZnSe buffer
layer exhibited a tilt with respect to the substrate along a <110> direction; this tilt was greater than the tilt which would
be attributed to growing a strained layer on the slightly miscut substrates which were used here. |
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Keywords: | II-VI compounds diffuse scattering reciprocal space map (RSM) stacking faults triple axis diffraction (TAD) |
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