| Mg_SiO_4:Cr~(3+)晶体的生长习性 |
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| 引用本文： | 夏海平,潘佩聪,胡兵,邓佩珍.Mg_SiO_4:Cr~(3+)晶体的生长习性[J].硅酸盐学报,1991(4). |
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| 作者姓名： | 夏海平 潘佩聪 胡兵 邓佩珍 |
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| 作者单位： | 中国科学院上海光学精密机械研究所
(夏海平，潘佩聪，胡兵)，中国科学院上海光学精密机械研究所(邓佩珍) |
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| 摘 要： | 分别沿a、b、c轴三种取向,用提拉法生长了Mg_2SiO_4:Cr~(3+)晶体;用X射线和光学方法测定了各个显露面,确定其密勒指数。利用修改的Hartman理论,计算了几个重要显露面的吸附能。根据吸附能大小判断了显露面的顺序,理论结果与实验结果相符。
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| 关 键 词： | 键长 键能 吸附能 显露面 |
GROWTH HABITS OF Mg_2SiO_4:Cr~(3+) CRYSTAL |
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| Xia Haiping Pan Peicong Hu Bing Dent Peizhen.GROWTH HABITS OF Mg_2SiO_4:Cr~(3+) CRYSTAL[J].Journal of The Chinese Ceramic Society,1991(4). |
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| Authors: | Xia Haiping Pan Peicong Hu Bing Dent Peizhen |
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| Abstract: | Mg_2SiO_4:Cr~(3+) crystals have been grown along the a, b and c-axis respectively by Czochralski technique. The orientations of all developing facets in the crystals and their Miller indices have been determined by means of X-ray and optical method. The relation between morphology of Mg_2SiO_4:Cr~(3+) crystal and it's structure is explained with the modified Hartman's theory. |
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| Keywords: | bond distance bond energy attachment energy developing facet |
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