| InP/InGaAs(P)材料中的低温开管Zn扩散 |
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| 引用本文： | 李维旦,潘慧珍.InP/InGaAs(P)材料中的低温开管Zn扩散[J].电子与信息学报,1987,9(6):571-576. |
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| 作者姓名： | 李维旦 潘慧珍 |
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| 作者单位： | 中国科学院上海冶金研究所
(李维旦)，中国科学院上海冶金研究所(潘慧珍) |
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| 摘 要： | 为了在InP/InGaAs(P)材料中进行精确的选择扩散,同时又要保证外延生长的多层异质结构不被破坏,提出了一种新的低温开管Zn扩散方法。该法直至在T=500℃,t=5min的条件下,重复性仍很好。应用该法研究了低温条件下Zn在InP,InGaAs(P)材料中的扩散行为。实验首次发现,Zn在InGaAsP材料中的扩散速率与材料中P含量的平方成正比。
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| 收稿时间： | 1986-5-22 |
| 修稿时间： | 1986-12-29 |
LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P) |
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| Li Weidan,Pan Huizhen.LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)[J].Journal of Electronics & Information Technology,1987,9(6):571-576. |
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| Authors: | Li Weidan Pan Huizhen |
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| Affiliation: | Shanghai Institute of Metallurgy Acadcmia Sinica |
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| Abstract: | A new method for accurate Zn diffusion in InP/InGaAs(P) at low temperature is put forward in order to keep the carrier profile in multilayers from redistribution. Several kinds of diffusion sources with different Zn contents are used in the experiment that shows good reprodu-cibility of the method. Using this method, the characteristics of low temperature Zn diffusion in InP, InGaAs and InGaAsP are studied, and it is found for the first time that the Zn diffusion, rate is proportional to the square of the phosphorus content in the materials. |
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