| 应用数学模型指导负阻Gunn器件的电路设计 |
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| 引用本文： | 王英华 赵建顺. 应用数学模型指导负阻Gunn器件的电路设计[J]. 山东轻工业学院学报, 2001, 15(2): 12-17 |
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| 作者姓名： | 王英华 赵建顺 |
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| 作者单位： | 王英华（济南大学信息与控制工程系山东济南 250022） 赵建顺（济南大学信息与控制工程系山东济南 250022） |
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| 摘 要： | 根据Gunn器件GaAs材料的半导体物理特性，曲载流子所满足的Poisson方程和电流连续性方程入手，分析了器件内部场分布特性，并采用数值法获得了Gunn器件的基波大信号特性，将描述Gunn器件谐波特性的数学模型应用到电路设计，不需要作进一步参数修正便可得到与实际相符的结果。
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| 关 键 词： | 数学模型 振荡器 负阻Gunn器件 电路设计 |
| 文章编号： | 1004-4280(2001)02-0012-06 |
| 修稿时间： | 2001-02-13 |
Applying the mathematical model to the design of the circuit of negative resistance Gunn device |
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| WANG Ying-hua,ZHAO Jian-shun. Applying the mathematical model to the design of the circuit of negative resistance Gunn device[J]. Journal of Shandong Institute of Light Industry(Natural Science Edition), 2001, 15(2): 12-17 |
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| Authors: | WANG Ying-hua ZHAO Jian-shun |
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| Abstract: | Based on the semiconductor physical behavior of GaAs Gunn device,utilizing Poisson equation and current continuous equation,the characteristic of the electromagnetic field distribution within the device is analyzed.Gunn's large signal behavior of the fundamental wave is obtained with numerical method.The mathematical model of the harmonic wave characteristic of the device is applied to the design of the circuit and the accurate results can be obtained without further parameter correction. |
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| Keywords: | Gunn diode mathematical model negative resistance numerical method |
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