Low-voltage low-power CMOS RF low noise amplifier |
| |
Authors: | Mohammed K. Salama Ahmed M. Soliman |
| |
Affiliation: | Department of Electronics and Communication, Cairo University, Giza, Egypt |
| |
Abstract: | In this paper, a 1 V, 2 GHz CMOS low-noise amplifier (LNA) was developed intended for use in the front-end receiver. The circuit is simulated in standard CMOS MOSIS. The LNA gain is 25.675 dB, noise figure (NF) is 4 dB, reverse isolation is , input return loss is , output return loss is , and the power consumption is 5.13 mA from a single 1 V power supply. One of the features of the proposed design is using a three-component cascode limitation, one of it is a transistor, to reduce the supply voltage. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|