Energy levels,oscillator strengths,and radiative rates for Si-like Zn XVII,Ga XVIII,Ge XIX,and As XX |
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Authors: | A Abou El-Maaref SH Allam ThM El-Sherbini |
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Affiliation: | 1. Physics Department, Faculty of Science, Al-Azhar University, Assuit, Egypt;2. Laboratory of Lasers and New Materials, Physics Department, Faculty of Science, Cairo University, Giza, Egypt |
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Abstract: | The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s23p2, 3s3p3, 3s23p3d, 3s23p4s, 3s23p4p and 3s23p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the Breit–Pauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels have also been calculated. |
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