| 斯蒂芬酸铅的半导体桥点火试验研究 |
| |
| 引用本文： | 冯红艳,朱顺官,张琳,李燕,沈瑞琪.斯蒂芬酸铅的半导体桥点火试验研究[J].兵工学报,2010,31(6):674-677. |
| |
| 作者姓名： | 冯红艳 朱顺官 张琳 李燕 沈瑞琪 |
| |
| 作者单位： | 南京理工大学,化工学院,江苏,南京,210094;南京理工大学,化工学院,江苏,南京,210094;南京理工大学,化工学院,江苏,南京,210094;南京理工大学,化工学院,江苏,南京,210094;南京理工大学,化工学院,江苏,南京,210094 |
| |
| 摘 要： | 通过对半导体桥(Semiconductor Bridge,SCB)装药条件下发火电压、发火电容及积分能量对点火时间影响的对比,结合不同点火条件下,桥体两端电压曲线、电流曲线和电流二次峰出现时间的比较,研究了斯蒂芬酸铅(LTNR)的半导体桥点火机理。试验发现特定的点火电路下,SCB点火时间存在一个临界值,且SCB等离子体形成的快慢直接影响点火时间。在充电电压从大到小的点火过程中,在桥与药剂之间存在2种不同的点火机理,在较高点火电压下为等离子体点火机理,在低电压为热点火机理。
|
| 关 键 词： | 电子技术 SCB点火时间 LTNR 点火机理 |
Experimental Research on Semiconductor Bridge Ignition for LTNR |
| |
| FENG Hong-yan,ZHU Shun-guan,ZHANG Lin,LI Yan,SHEN Rui-qi.Experimental Research on Semiconductor Bridge Ignition for LTNR[J].Acta Armamentarii,2010,31(6):674-677. |
| |
| Authors: | FENG Hong-yan ZHU Shun-guan ZHANG Lin LI Yan SHEN Rui-qi |
| |
| Affiliation: | （School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, China） |
| |
| Abstract: | The ignition mechanism of the Semiconductor Bridge(SCB) ignition for LTNR was studied by comparing the effects of the firing voltage,capacitance and integral energy on the ignition time.The curves of voltage,current of the SCB and the appearing time of the second current peak under the same ignition condition were analyzed also.The results indicate that a critical function time exists for a given ignition circuit and it is affected by the forming time of the plasma.Two different ignition mechanisms are foun... |
| |
| Keywords: | LTNR |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《兵工学报》浏览原始摘要信息 |
|
点击此处可从《兵工学报》下载全文 |
|
