低辐射DGS 及其串扰分析

在传统哑铃形缺陷接地结构(DGS)的基础上,设计出一种新型低辐射DGS。该结构既具有传统DGS的优良电路性能,又大大降低了由于接地面蚀刻缺陷图案而引起的无意辐射。进一步仿真分析了低辐射DGS 的串扰,结果表明低辐射DGS 近端串扰峰值电压较哑铃形DGS 下降60%,远端串扰峰值电压下降了36. 8%,证明低辐射DGS 能大大降低由于DGS 的应用对周围电路产生的影响。与接地面完整的平行微带线相比,低辐射DGS 近端串扰略大,但远端串扰在4 ~6 GHz 频段内存在阻带,当受扰线工作在远端串扰的阻带频段内,对远端串扰的抑制效果十分明显。

Crosstalk Analysis of the Defected Ground Structure with Low Radiation

A new defected ground structure with low radiation is proposed in this paper. The proposed DGS structure has the same property as the traditional DGS structure, and it also provides much lower radiation than the traditional DGS structure. In this paper crosstalk of the new DGS will be simulated to prove the radiation can be reduced greatly. The results show that the peak voltage of the near end crosstalk of the DGS with low radiation have dropped 60% compared with the dumbbell shaped DGS, and the peak voltage of the far end crosstalk have dropped 36. 8% . Compared to the Coupling microstrip line of an unbroken ground, the near end crosstalk of the DGS with Low radiation is larger slightly, but the far end crosstalk has a stopband ranged from 4GHz to 6GHz, and when the victim circuits work in the frequency range , the far end crosstalk will be suppressed obviously.