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Electron beam lithography using chemically-amplified resist: Resolution and profile control |
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| Authors: | V. A. Kudryashov V. V. Krasnov S. E. Huq P. D. Prewett T. J. Hall |
| Affiliation: | a Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia b Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX, UK c Department of Electrical Engineering, King's College London, Strand, London, WC2R 2LS, UK |
| Abstract: | The effect of post exposure bake and softbake conditions on the sensitivity of AZPN114 has been investigated experimentally. A bilayer system for undercut structures has been achieved using two layers of AZPN114 with different softbake temperatures. A single layer of AZPN114 has also been used to produce undercut and tailored resist profiles by two different multiple exposure strategies at different beam energies. |
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