Laboratorio de Semiconductores. Instituto de Física del Estado Sólido (C.S.I.C.-U.A.M.). Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, Madrid, Spain
Abstract:
Platinum-silicon Schottky diodes on epitaxial layers have been subjected to argon ion bombardment, prior to metal evaporation, with doses in the 1014 ions/cm2 range and with energies between 1 and 3.5 KeV. By transient capacitance technique four electron traps have been found. The oxygen-vacancy pair (O-V) located at 0.17 eV below the conduction band, the double negatively charged divacancy (V-V=) at 0.23 eV and the phosphorous-vacancy pair (P-V) at 0.44 eV are observed. One more unknown level at 0.36 eV which could be oxygen-related is also found.