A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure |
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| Authors: | Watanabe H Komori J Higashitani K Sekine M Koyama H |
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| Affiliation: | ULSI Lab., Mitsubishi Electr. Corp., Hyogo; |
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| Abstract: | A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices |
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