Nondestructive diagnostics of microchannel (Macroporous) silicon by X-ray topography

It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring of the structure of a microchannel layer at a spatial resolution of ≥5 μm.