Nondestructive diagnostics of microchannel (Macroporous) silicon by X-ray topography |
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Authors: | E. V. Astrova A. D. Remenyuk A. G. Tkachenko I. L. Shul’pina |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring of the structure of a microchannel layer at a spatial resolution of ≥5 μm. |
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