Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature |
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Authors: | E Elangovan A Marques A Pimentel R Martins E Fortunato |
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Affiliation: | Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2829-516 Caparica, Portugal |
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Abstract: | Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O2 vol. %); whereas this transmittance was decreased with the increasing O2 vol. % to as low as 81.04% (15.6 O2 vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O2 vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. % to as high as 3.91 eV (17.5 O2 vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N2:H2 gas atmosphere (17.5 O2 vol. %). |
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Keywords: | Indium oxide Molybdenum doping Thin films and RF sputtering |
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