Composition and optical properties of silicon nitride films grown on SiO2-glass and R-Al2O3 substrates by reactive RF magnetron sputtering期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Composition and optical properties of silicon nitride films grown on SiO₂-glass and R-Al₂O₃ substrates by reactive RF magnetron sputtering

Authors:	N Matsunami S Ninad T Shimura Y Chimi

Affiliation:	^a Division of Energy Science, EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan ^b National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan ^c Nano-Materials Division, EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan ^d Japan Atomic Energy Agency (JAEA), Tokai 319-1195, Japan

Abstract:	We have grown silicon nitride (Si₃N₄) films on SiO₂-glass and R-Al₂O₃ substrates by using reactive RF magnetron sputtering deposition methods with N₂ pure gas and N₂ + Ar mixture gas. The film composition, thickness and impurities have been examined by ion beam analysis. It is shown that the films have stoichiometric composition and are free from Ar contamination, when N₂ gas was used for the film deposition. Effects of impurities on the film properties, e.g., optical properties will be discussed.

Keywords:	Silicon nitride Film growth Optical properties Impurities
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