| 接近式光刻中斜照明改善分辨率的模拟与分析 |
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| 引用本文： | 赵永凯,黄惠杰,路敦武,杜龙龙,杨良民,袁才来,蒋宝财,王润文. 接近式光刻中斜照明改善分辨率的模拟与分析[J]. 微细加工技术, 2001, 0(2): 9-13,60 |
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| 作者姓名： | 赵永凯 黄惠杰 路敦武 杜龙龙 杨良民 袁才来 蒋宝财 王润文 |
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| 作者单位： | 中国科学院上海光学精密机械研究所, |
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| 基金项目： | 国家自然科学基金资助项目(69878029) |
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| 摘 要： | 根据菲涅尔－基尔霍尔衍射公式，推导出斜照明接近式光刻系统中硅片表面的光强分布，并在几种条件下进行了模拟数值计算,分析了斜照技术的实用条件及改善光刻分辨率 的效果和应用前景。
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| 关 键 词： | 接近式光刻 准分子激光光刻 分辨率 斜照明 |
| 文章编号： | 1003-8213(2001)02-0009-06 |
Lithography by Off-axis Illumination ZHAO Yong-kai, HUANG Hui-jie, LU Dun-wu, DU Long-long, |
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| ZHAO Yong-kai,HUANG Hui-jie,LU Dun-wu,DU Long-long,YANG Liang-min,YUAN Cai-lai,JIANG Bao-cai,WANG Run-wen. Lithography by Off-axis Illumination ZHAO Yong-kai, HUANG Hui-jie, LU Dun-wu, DU Long-long,[J]. Microfabrication Technology, 2001, 0(2): 9-13,60 |
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| Authors: | ZHAO Yong-kai HUANG Hui-jie LU Dun-wu DU Long-long YANG Liang-min YUAN Cai-lai JIANG Bao-cai WANG Run-wen |
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| Abstract: | Intensity distribution on the wafer plane in proximity printing system under off-axis illumination is derived based on the amplitude analytic expression for Fresnel-Kirchhoff diffraction.Numerical simulations have been done under various conditions.Resolution enhancement effect by off-axis illumination and its application are analyzed. |
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| Keywords: | proximity lithography excimer laser lithography resolution enhancement off-axis illumination |
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