InP/InAlAs/InGaAs quantum wires |
| |
| Affiliation: | 1. Institut für Festköperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany;1. Siemens AG, Otto-Hahn-Ring 6, D-81730 München, Germany |
| |
| Abstract: | Single InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapour deposition (MOCVD). We have found growth conditions where the InAIAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
