Preparation of in-plane textured buffer layers for YBa2Cu3Oy film growth by modified bias sputtering |
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Affiliation: | 1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA;2. General Atomics, San Diego, California 92186, USA |
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Abstract: | A modified bias sputtering technique has been proposed to grow in-plane textured yttria-stabilized zirconia buffer layers on polycrystalline metallic substrates for deposition of YBa2Cu3Oy films. The principle of developing an in-plane texturing by this technique is basically the same as that of ion beam assisted deposition; an in-plane texturing occurs by off-normal ion beam bombardment because of the higher sputtering yields of all orientations other than the channelling direction. In our process, however, a flux of energetic particles impinging on the growing film is generated using specially devised negatively biased electrodes installed in a magnetron sputtering system instead of a separate ion-source in IBAD. So far an X-ray phi-scan width of 18° was attained for YSZ films on Hastelloy tapes. Epitaxial YBCO films grown on these buffer layers using pulsed laser deposition showed the Jc’s exceeding 105 A cm−2 (77 K, 0 T). In this paper, we present variation of the bias sputtering technique also used to obtain the textured films on large area substrates. Although the proposed process offers a very convenient method to grow textured films, more efforts must be made to increase growth rates of the films (currently ∽0.1 nm s−1) for large-scale applications of YBCO films. |
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