| 双向IGBT开关在矩阵变换器中的应用 |
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| 引用本文： | Dinesh Chamund Bill Findlay Kevan Birkett Dynex Semiconductor Pat Wheeler Jon Clare Michael Bland. 双向IGBT开关在矩阵变换器中的应用[J]. 电力电子, 2005, 3(3): 40-44 |
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| 作者姓名： | Dinesh Chamund Bill Findlay Kevan Birkett Dynex Semiconductor Pat Wheeler Jon Clare Michael Bland |
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| 作者单位： | [1]不详 [2]诺丁汉大学,美国 |
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| 摘 要： | 双向IGBT模块是实现高频矩阵变换器极为有效的方法。略不同于硬开关PWM变换器，矩阵变换器中的开关和传导损耗取决于所选的调制策略。本文介绍了一种由诺丁汉大学推导的平均损耗的计算公式。测试一个使用1200V，200A的双向模块实现的三相到单相的构造，得到的波形说明了矩阵变换器的实际操作以及可能会出现的输出电流纹波。
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| 关 键 词： | 矩阵变换器 IGBT开关 双向 IGBT模块 应用 PWM变换器 传导损耗 调制策略 电流纹波 |
Bi-directional IGBT Switches for Matrix Converter Applications |
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| Dinesh;Chamund[MeiGuo];Bill;Findlay[MeiGuo];Kevan;Birkett[MeiGuo];Dynex;Semiconductor[MeiGuo];Pat;Wheeler;Jon;Clare;Michael;Bland. Bi-directional IGBT Switches for Matrix Converter Applications[J]. Power Electronics, 2005, 3(3): 40-44 |
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| Authors: | Dinesh Chamund[MeiGuo] Bill Findlay[MeiGuo] Kevan Birkett[MeiGuo] Dynex Semiconductor[MeiGuo] Pat Wheeler Jon Clare Michael Bland |
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| Abstract: | Bi-directional IGBT modules are an efficient means of implementing high frequency matrix converters. Switching and conduction losses in matrix converters are somewhat different from those applicable to hard-switched PWM converters and depend on the chosen modulation strategy. Equations for the calculation of the average losses have been derived by Nottingham University and presented here. The test waveforms for a three phase to single phase configuration using a 1200V, 200A bi-direcfional modules illustrate the oractical ooeration of a matrix converter and the level of output current ripple that can be achieved. |
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