Preparation of PbZrO3–PbTiO3 Ferroelectric Thin Films by the Sol–Gel Process

Ferroelectric films, PbZr _x Ti_{1? x} O₃ ( x = 0 to 0.6), have been prepared from corresponding metal alkoxides partially stabilized with acetylacetone through the sol-gel process. The films dip-coated in an ambient atmosphere were heat-treated at 400°C for decomposition of residual organics and then at temperatures between 500° and 700°C for crystallization of the films. The perovskite phase precipitated at temperatures above 560°C, accompanied by an increase in dielectric constant. The dielectric constant of the films, which was comparable with that of sintered bodies, showed a maximum (～620) at around x = 0.52 in PbZr _x Ti_{1? x} O₃. These films showed D – E hysteresis, with slightly higher values of coercive field, compared with those of sintered bodies.