Improved memristor-based relaxation oscillator |
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Authors: | AG Mosad ME Fouda MA Khatib KN Salama AG Radwan |
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Affiliation: | 1. Nanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt;2. Engineering Mathematics Department, Cairo University, Egypt;3. Electrical Engineering Department, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia |
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Abstract: | This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator. |
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Keywords: | Memristor Reactance-less oscillator Relaxation oscillator Memristive circuits |
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