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Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications |
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| Authors: | M. Debbichi, A. Ben Fredj, A. Bhouri, M. Saï d, J.-L. Lazzari, Y. Cuminal, A. Joulli ,P. Christol |
| Affiliation: | aUnité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisie bCentre de Recherche en Matière Condensée et Nanosciences, CRMC-N, UPR-CNRS 7251, Laboratoire associé à l'Université de la Méditerranée et à l'Université Paul Cézanne, Case 913, Campus de Luminy, 13288 Marseille cedex 9, France cInstitut d'Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Université Montpellier 2, 34095 Montpellier cedex 05, France |
| Abstract: | We report on optical gain calculations of a dilute-nitride mid-infrared laser structure designed to be grown on InAs substrate. The active region is composed of several strain-compensated type-II “W”-like InAsN/GaSb/InAsN quantum wells adapted to operate near 3.3 μm at room temperature. For typical injected carrier density σ = 1.1012 cm− 2, the theoretical laser structure performances reveal a gain value at around 1000 cm− 1 at 300 K, inducing a modal gain value equal to 50 cm− 1. Low radiative current densities lower than 100 A/cm2 are predicted, indicating that this dilute-nitride structure could operate at 300 K with small threshold current density. |
| Keywords: | Mid-infrared lasers Dilute nitride W lasers Optical gain |
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