A new technique to extract oxide trap time constants in MOSFET's |
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Authors: | Tahui Wang Chang TE Chiang LP Huang C |
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Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs=-4 V and Vds=3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds |
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