Very high efficiency V-band power InP HEMT MMICs |
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| Authors: | Kong WMT Wang SC Pane-Chane Chao Der-Wei Tu Kuichul Hwang Tang OSA Shih-Ming Liu Pin Ho Nichols K Heaton J |
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| Affiliation: | Microwave Electron. Group, Lockheed Martin Co., Nashua, NH; |
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| Abstract: | State-of-the-art power performance of a V-band InP HEMT MMIC is reported using a slot via process for reducing source inductance and a fully selective gate recess process for uniformity and high yield. The 0.1 μm gate length, high performance InGaAs/InAlAs/InP HEMTs that were utilized in the circuit exhibited a maximum power density of 530 mW/mm, power added efficiency of 39%, and a gain of 7.1 dB. At 60 GHz, a single-stage monolithic power amplifier achieved an output power of 224 mW with a PAE of 43%. The associated gain was 7.5 dB. These results are the best combination of output power and efficiency reported for an InP device and a MMIC at V-band, and clearly demonstrates the potential of the InP HEMT technology for very high efficiency, millimeter wave power applications |
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