Fabrication of high-quality ZnS buffer and its application in Cd-free CIGS solar cells |
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Authors: | Feng-yan Li Xiang-yu Dang Li Zhang Fang-fang Liu Ding Sun Qing He Chang-jian Li Bao-zhang Li and Hong-bing Zhu |
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Affiliation: | 1. Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300071, China 2. College of Physics Science & Technology, Hebei University, Baoding, 071002, China
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Abstract: | This paper provides the fabrication of Cd-free Cu(In,Ga)Se2 (CIGS) solar cells on soda-lime glass substrates. A high quality ZnS buffer layer is grown by chemical bath deposition (CBD) process with ZnSO4-NH3-SC (NH2)2 aqueous solution system. The X-ray diffraction (XRD) result shows that the as-deposited ZnS film has cubic (111) and (220) diffraction peaks. Scanning electron microscope (SEM) images indicate that the ZnS film has a dense and compact surface with good crystalline quality. Transmission measurement shows that the optical transmittance is about 90% when the wavelength is beyond 500 nm. The bandgap (E g ) value of the as-deposited ZnS film is estimated to be 3.54 eV. Finally, a competitive efficiency of 11.06% is demonstrated for the Cd-free CIGS solar cells with ZnS buffer layer after light soaking. |
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