Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes |
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| Authors: | Gui-chu Chen and Guang-han Fan |
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| Affiliation: | 1. Department of Electronic Information, Zhao Qing University, Zhaoqing, 526061, China
2. Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, China
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| Abstract: | The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly. |
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