Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material |
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Authors: | S Bagchi J D Lee S J Krause P Roitman |
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Affiliation: | (1) Department of Chemical, Bio and Materials Engineering, Arizona State University, 85287 Tempe, AZ;(2) National Institute of Standards and Technology, 20899 Gaithersburg, MD |
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Abstract: | The defects and microstructure of low-dose (<0.7 × 1018 cm−2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature
by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3×1018 cm−2), annealed SIMOX originate from unfaulting of long (∼10 μm), shallow (0.3 μm), extrinsic stacking faults generated during
the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer
evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried
oxide with a reduced density of Si islands in the buried oxide. |
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Keywords: | Dislocation half-loop multiply-faulted defect silicon islands SIMOX stacking fault pyramid threading dislocation |
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