Some properties of thin aluminium nitride films formed in a glow discharge

The formation of thin AlN films and some of their electrical properties have been investigated. The films were prepared by exposing the surface of evaporated aluminium films to a glow discharge in pure nitrogen gas. It has been confirmed by transmission electron diffraction that the structure of the film is of the wurtzite type, as is that of the bulk material. It was observed that the thickness of the AlN films depends on the voltage of the glow discharge, the distance from the discharge electrode to the films and the treatment time. The electrical properties were measured in the form of a sandwich diode, i.e. Al-AlN-Au. The voltage-controlled negative resistance, which was first discovered in Al-Al₂O₃-metal diodes, has also been observed in this nitride film diode and shows very good reproducibility and stability.