Power law reverse current-voltage characteristic in Schottky barriers |
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Authors: | Jules D. Levine |
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Affiliation: | RCA Laboratories, Princeton, New Jersey, USA |
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Abstract: | A power law relationship between the reverse current and reverse voltage is computed theoretically using a model involving an exponential distribution of interface states. The model correlates Schottky barrier data on large bandgap semiconductors such as ZnO and GaP where the reverse current is proportional to the sixth power of the reverse voltage. |
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