Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light |
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Authors: | Yujing Du Yifan Zhao Lei Wang Zhexi He Yangyang Wu Chenying Wang Libo Zhao Zhuangde Jiang Ming Liu Ziyao Zhou |
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Affiliation: | 1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049 China;2. Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, No. 28 Xianning West Road Xi'an, Shaanxi, 710049 China;3. School of Mathematical Sciences, Tiangong University, Tianjin, 300387 China;4. State Key Laboratory for Manufacturing Systems Engineering, Collaborative Innovation Center of High-End Manufacturing Equipment, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049 China |
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Abstract: | Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated. |
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Keywords: | deterministic magnetization reversal interfacial magnetoelectric coupling photovoltaic control of magnetism RKKY interaction synthetic antiferromagnetism |
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