Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells (Small 22/2023) |
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| Authors: | Jihun Kim Jun Sung Jang Seung Wook Shin Hyeonghun Park Woo-Lim Jeong Seung-Hyun Mun Jung-Hong Min Jiyoung Ma Jaeyeong Heo Dong Seon Lee Jung-Je Woo Jin Hyeok Kim Hyeong-Jin Kim |
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| Affiliation: | 1. Gwangju Clean Energy Research Center, Korea Institute of Energy Research (KIER), 270-25 Samso-ro, Gwangju, 61003 South 2. Korea;3. Optoelectronic Convergence Research Center, Department of Materials Science and Engineering, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju, 61186 South 4. Future Agricultural Research Division, Water Resource and Environment Research Group, Rural Research Institute, Korea Rural Community Corporation, Ansan-Si, 15634 South Korea;5. Graduate School of Energy Convergence, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005 South 6. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005 South |
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| Abstract: | Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the Voc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%). |
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| Keywords: | Co-doped ZnO electron-transporting layers Li-doped graphene oxide thin-film solar cells transparent electrodes |
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