Experimental and theoretical radiation damage studies on crystalline silicon solar cells |
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Authors: | M Alurralde M J L Tamasi C J Bruno M G Martínez Bogado J Pl J Fernndez Vzquez J Durn J Schuff A A Burlon P Stoliar A J Kreiner |
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Affiliation: | a Departamento de Materiales, Centro Atómico Constituyentes (CAC) - CNEA, Av. General Paz 1499, 1650 San Martín, Buenos Aires, Argentina;b Departamento de Física, Centro Atómico Constituyentes (CAC) - CNEA, Av. General Paz 1499, 1650 San Martín, Buenos Aires, Argentina;c Consejo Nacional de Investigaciones Científicas y Tecnológicas (CONICET), Argentina;d Escuela de Ciencia y Tecnología, Universidad de San Martín, Villa Ballester, Argentina |
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Abstract: | An experimental facility was developed to asses in situ the degradation of crystalline silicon solar cells, fabricated by the Solar Energy Group of the National Atomic Energy Commission (CNEA), by measuring the current–voltage characteristic curve. The cells were irradiated with 10 MeV protons and fluences between 108 and 1013 p/cm2, using an external beam of the linear tandem accelerator TANDAR, at CAC-CNEA. Furthermore, theoretical simulations were performed to establish the relation between the variation of the electrical parameters and the degradation of the lifetime of minority carriers in the base. The damage constant for 10 MeV proton irradiated silicon solar cells of n+–p–p+ structure and 1 Ω cm base resistivity was determined. Finally, a proposal of a new model of radiation damage for silicon solar cells is discussed. |
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Keywords: | Radiation damage c-Si solar cells Space applications |
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