基于SiC器件的高效率功率因数校正电源研究

针对传统有桥Boost功率因数校正电路效率不高的问题,分析了Boost功率因数校正电路的基本结构以及控制方法,Si C器件的特点和发展历程,提出了使用Si C器件来提升其功率密度的方案。介绍了功率因数校正电路中重要参数的设计,简述了一种适用于PFC功率电感的设计方法以及主要设计步骤,并分析了传统有桥功率因数校正电路的损耗分布情况。选取了数家公司生产的不同材料的MOSFET,搭建了对应的1.2 kW实验样机,并测量了各个样机效率。研究结果表明,在115 V交流输入下,相比infineon公司最新的具有超结结构的Cool MOS,ROHM公司的大电流Si MOSFET,使用SiC MOSFET能够提升有桥功率因数电路的工作效率。

High efficiency power factor correction power supply based on SiC device

Aiming at the problem that the bridge Boost power factor correction circuit was not efficient.The basic structure and control method of Boost power factor correction circuit,the characteristics and development process of SiC device were analyzed,and the scheme of using SiC device to enhance its power density was proposed.The design of important parameters in power factor correction circuit was introduced.A design method for PFC power inductor was introduced.The design steps were analyzed and the loss distribution of traditional bridge power factor correction circuit was analyzed.Several MOSFETs with different materials were selected and the corresponding 1.2 kW prototype was set up,and the efficiency of each prototype was measured.The results indicate that compares with infineon's latest super-junction structure with CoolMOS,ROHM's high current Si MOSFET,the use of SiC MOSFET can improve the efficiency of the bridge power factor circuit.