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量子阱DBR微腔激光器中自发发射的控制
引用本文:赵红东,张以谟,张存善,周革,沈光地.量子阱DBR微腔激光器中自发发射的控制[J].半导体学报,2000,21(10):984-987.
作者姓名:赵红东  张以谟  张存善  周革  沈光地
作者单位:[1]河北工业大学电气信息学院天津大学精密仪器与光电子工程学 [2]河北工业大学电气信息学院天津大学精密仪器与光电
基金项目:北京市自然科学基金;4972006;
摘    要:应用腔量子电动力学和量子阱物理 ,计算了量子阱 DBR微腔激光器的自发发射谱 .发现由于 DBR微腔和量子阱分别对光子和载流子的限制 ,单方向的自发发射可以增进约三个量级 ,总的自发发射增强一个量级 .

关 键 词:量子阱微腔激光器    自发发射    DBR
文章编号:0253-4177(2000)10-0984-04
修稿时间:1999年10月1日

Control of Spontaneous Emission in Quantum Well Micro-Cavity Lasers with Distributed Bragg Reflectors
ZHAO Hong dong ,ZHANG Yi mo ,ZHANG Cun shan ,ZHOU Ge and SHEN Guang di.Control of Spontaneous Emission in Quantum Well Micro-Cavity Lasers with Distributed Bragg Reflectors[J].Chinese Journal of Semiconductors,2000,21(10):984-987.
Authors:ZHAO Hong dong    ZHANG Yi mo  ZHANG Cun shan  ZHOU Ge and SHEN Guang di
Affiliation:ZHAO Hong dong 1,2,ZHANG Yi mo 2,ZHANG Cun shan 1,ZHOU Ge 2 and SHEN Guang di 3
Abstract:Based on cavity quantum electrodynamics and physics of quantum well, the spontaneous emission spectra in quantum well micro cavity lasers with DBRs have been calculated. As a result, spontaneous emission intensity in one direction can be enhanced to about10\+3 times greater than that in the semiconductor bulk material due to the confinement of the micro cavity with DBRs and quantum well to the photons and carries, respectively. The total spontaneous emission intensity also increases 10 times.
Keywords:quantum  well micro  cavity laser  spontaneous emission  DBR
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