Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices |
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Authors: | Byoung Hun Lee Rino Choi Sim JH Krishnan SA Peterson JJ Brown GA Bersuker G |
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Affiliation: | SEMATECH, Austin, TX, USA; |
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Abstract: | Charge trapping in high-/spl kappa/ gate dielectrics affects the result of electrical characterization significantly. DC mobility degradation and device threshold voltage instability and C-V and I-V hysteresis are a few examples. The charging effects in high-/spl kappa/ gate dielectric also affect the validity of conventional reliability test methodologies developed for SiO/sub 2/ devices. In this paper, we review high-/spl kappa/ materials specific phenomena that can affect the validity of constant-voltage-stress-based reliability test methods to address the direction of future reliability study on high-/spl kappa/ devices. |
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