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| 铜铟镓硒薄膜太阳电池的应力问题 | |
| 引用本文： | 李微,刘兴江,赵彦民,闫礼,乔在祥,孙云. 铜铟镓硒薄膜太阳电池的应力问题[J]. 电源技术, 2011, 35(4): 420-421 |
| 作者姓名： | 李微 刘兴江 赵彦民 闫礼 乔在祥 孙云 |
| 作者单位： | 1. 中国电子科技集团公司,第十八研究所,化学与物理电源技术重点实验室,天津,300381;天津大学,材料科学与工程学院,天津,300071 2. 中国电子科技集团公司,第十八研究所,化学与物理电源技术重点实验室,天津,300381 3. 南开大学,信息技术科学学院,光电子研究所,天津,300071 |
| 摘 要： | 分析了CIGS太阳电池的总应力来自于单层膜中的沉积应力及膜层界面间的相互作用.计算得出Mo薄膜与CIGS薄膜界面晶格失配度最大,表明相对于其他界面,该界面的应力值较大.而作为缓冲层的CdS薄膜有效地改善了吸收层CIGS薄膜与窗口层ZnO薄膜的界面应力.而对于柔性衬底材料的PI薄膜,如何解决因其较大的热膨胀系数造成的热应... |
| 关 键 词： | CIGS太阳电池 薄膜 应力 |
Stress in CIGS thin film solar cell |
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| LI Wei,LIU Xing-jiang,ZHAO Yan-min,YAN Li,QIAO Zai-xiang,SUN Yun. Stress in CIGS thin film solar cell[J]. Chinese Journal of Power Sources, 2011, 35(4): 420-421 | |
| Authors: | LI Wei LIU Xing-jiang ZHAO Yan-min YAN Li QIAO Zai-xiang SUN Yun |
| Affiliation: | 1.National Key Laboratory of Power Sources,Tianjin Institute of Power Sources,Tianjin 300381,China; 2.School of Material Science and Engineering,Tianjin University,Tianjin 300071,China; 3.Institute of Photoelectronic Thin Film Device and Technology,Nankai University,Tianjin 300071,China) |
| Abstract: | The residual stress was analyzed in the CIGS solar cell including stress of each layer and interface stress.The biggest grade of lattice mismatch existed in the interface of Mo/CIGS thin film,which led to the great interface stress.The CdS thin film could relieve effectively the interface stress of CIGS film and ZnO film.The key technology for improved performance of flexible CIGS solar cell was how to release the thermal stress which caused by the high thermal expansion coefficient of PI substrate. |
| Keywords: | CIGS solar cell thin film stress |
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