Positive flatband voltage shift in MOS capacitors on n-type GaN |
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| Authors: | Matocha K Chow TP Gutmann RJ |
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| Affiliation: | Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY; |
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| Abstract: | GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900°C. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 × 109 q/cm2-K, corresponding to a pyroelectric voltage coefficient of 7.0 × 104 V/m-K |
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