100 mm直径低位错密度InSb单晶生长研究

InSb是一种重要的中波红外探测器材料。为了满足更大规模、更高质量红外焦平面探测器的发展要求，对100 mm直径低位错密度InSb单晶的生长进行了研究。通过改良生长方法、优化籽晶、改进缩颈工艺、优化热场，最终获得位错密度小于等于100 cm-2、直径大于等于100 mm的大尺寸低位错密度InSb晶体。晶体沿晶棒从头到尾部的位错密度分布均匀，可用率高，能够满足大规模高质量红外焦平面探测器的使用需求。

Study of Growth of 100 mm Diameter Low Dislocation Density InSb Single Crystal

InSb is an important material for medium wave infrared detectors. To meet the development requirements of larger format high quality infrared focal plane array detectors, the growth of InSb single crystals with diameter of 100 mm and low dislocation density is studied. By improving and optimizing the growth method, seed, necking process and thermal field, a large size low dislocation density InSb crystal with its dislocation density equal to or less than 100 cm-2 and diameter equal to or greater than 100 mm is obtained eventually. The dislocation density of the crystal is distributed uniformly from the top to the end along the crystal rod. It can satisfy the use requirements of large format high quality infrared focal plane array detectors.