| RESURF LDMOS功率器件表面场分布和击穿电压的解析模型 |
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| 引用本文： | 何进,张兴. RESURF LDMOS功率器件表面场分布和击穿电压的解析模型[J]. 半导体学报, 2001, 22(9): 1102-1106 |
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| 作者姓名： | 何进 张兴 |
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| 作者单位： | 北京大学微电子学研究所,北京100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);G2000365; |
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| 摘 要： | 提出了 RESURF L DMOS功率器件的表面电场分布和击穿电压的解析模型 .根据二维泊松方程的求解 ,得到了与器件参数和偏压相关的表面电场和电势分布解析表达式 .在此基础上 ,推出了为获得击穿电压和比导通电阻最好折中的优化条件 .该解析结果与半导体器件数值分析工具 MEDICI得到的数值分析结果和先前的实验数据基本一致 ,证明了解析模型的适用性
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| 关 键 词： | RESURF原理 LDMOS功率器件 表面场分布 击穿电压 比导通电阻 优化设计 |
| 文章编号： | 0253-4177(2001)09-1102-05 |
| 修稿时间： | 2000-12-28 |
Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor |
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| HE Jin,ZHANG Xing. Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor[J]. Chinese Journal of Semiconductors, 2001, 22(9): 1102-1106 |
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| Authors: | HE Jin ZHANG Xing |
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| Abstract: | An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data. |
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| Keywords: | RESURF principle LDMOS power transistor breakdown voltage surface field on-resistance optimum design |
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