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The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C |
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| Authors: | Yiheng Lin Hiroshi Yasuda Manfred Schiekofer Guangrui Xia |
| Affiliation: | 1. Department of Materials Engineering, The University of British Columbia, 309-6350 Stores Rd, Vancouver, BC, V6T 1Z4, Canada 2. Texas Instruments, 13121 TI Blvd., Dallas, TX, 75243, USA 3. Texas Instruments Deutschland GmbH, Haggertystrasse 1, 85356, Freising, Germany |
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